Active matrix substrate, display device, television apparatus, manufacturing method of an active matrix substrate, and manufacturing method of a display device

ABSTRACT

An active matrix substrate includes: a plurality of pixel electrodes arranged in a matrix pattern and each forming a pixel; a plurality of gate lines each provided between the corresponding pixel electrodes and extending in parallel with each other; a plurality of first source lines each provided between the corresponding pixel electrodes and extending in a direction crossing an extending direction of the gate lines; a plurality of TFTs provided corresponding to the respective pixel electrodes and connected to the respective pixel electrodes, the respective gate lines, and the respective first source lines; a plurality of capacitor lines each provided between the corresponding gate lines and extending in parallel with each other; and a plurality of second source lines each provided between the corresponding pixel electrodes and extending in parallel with the first source lines.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an active matrix substrate forming adisplay device such as a liquid crystal display device and an EL(electroluminescence) display device. More particularly, the presentinvention relates to a defect repair technology for an active matrixsubstrate.

2. Description of the Related Art

An active matrix substrate has been widely used in display devices suchas a liquid crystal display device and an EL display device. Forexample, an active matrix substrate forming a liquid crystal displaydevice is disclosed in Japanese Laid-Open Patent Publication No.9-152625.

FIG. 14 is a plan view of a single pixel of a conventional active matrixsubstrate 120. This active matrix substrate 120 includes a plurality ofpixel electrodes 112 arranged in a matrix pattern, TFTs (Thin FilmTransistors) 105 respectively corresponding to the pixel electrodes 112,a plurality of gate lines 101 extending in parallel with each otherbetween the pixel electrodes 112, a plurality of source lines 103extending in parallel with each other between the pixel electrodes 112in a direction crossing the extending direction of the gate lines 101,and capacitor lines 102 extending in parallel with each other betweenthe gate lines 101.

Each TFT 105 includes a gate electrode 101 a connected to acorresponding gate line 101, a semiconductor layer 104 covering the gateelectrode 101 a, a source electrode 103 a formed over the semiconductorlayer 104 and connected to a corresponding source line 103, and a drainelectrode 103 b facing the source electrode 103 a over the semiconductorlayer 104. The drain electrode 103 b is extended to a region where acorresponding capacitor line 102 extends, so as to serve as an extendeddrain electrode 107 and a capacitor electrode 106. The extended drainelectrode 107 and the capacitor electrode 106 are connected to acorresponding pixel electrode 112 through a contact hole 111 b.

In a liquid crystal display device (a liquid crystal display panel)including the active matrix substrate 120, a counter substrate having acommon electrode, and a liquid crystal layer interposed between theactive matrix substrate 120 and the counter substrate and includingliquid crystal molecules, an image is displayed by transmitting asappropriate an image signal to the pixel electrodes 112 connected to therespective TFTs 105 by using a switching function of the TFTs 105. Inthe active matrix substrate 120, an auxiliary capacitor is formedbetween each capacitor line 102 and each capacitor electrode 106 inorder to prevent self-discharge of the liquid crystal layer during anoff-state period of the TFTs 105 or to prevent degradation of an imagesignal due to an off-state current of the TFTs 105, and for use as, forexample, a path for applying various modulating signals for liquidcrystal driving.

Recently, in order to implement a wider viewing angle, a VA (VerticalAlignment) mode liquid crystal display device having multi-domains,i.e., an MVA (Multi-domain Vertical Alignment) mode liquid crystaldisplay device, has been widely used in a large size liquid crystaltelevision apparatus (liquid crystal TV) and the like (for example, seeJapanese Laid-Open Patent Publication No. 2001-83523).

In such an MVA mode liquid crystal display device, an incision pattern(a slit portion) or a projection for controlling orientation of liquidcrystal molecules is formed in pixel electrodes of an active matrixsubstrate and a common electrode of a counter substrate in order to forma fringe field. A wider viewing angle is implemented by distributing theorientation direction of the liquid crystal molecules in a plurality ofdirections by using the fringe field. Japanese Laid-Open PatentPublication No. 2001-117083 discloses a technology of embedding anelectrode at a location corresponding to the incision pattern of thepixel electrode and the common electrode in order to prevent lightleakage and to improve an initial response speed after voltageapplication.

In a manufacturing process of an active matrix substrate, foreignparticles on the substrate or the like may cause gate linedisconnection. A normal voltage (a drain voltage) cannot be applied topixel electrodes on the disconnected gate line. Therefore, dot defectsare visually recognized as a line defect along the disconnected gateline on the display screen of the liquid crystal display device. Aliquid crystal display device becomes defective as the number of suchline defects increases. As a result, manufacturing yield of the liquidcrystal display device is reduced.

For example, Japanese Laid-Open Patent Publication No. 5-333373discloses an active matrix liquid crystal display device having arepairing crossing portion in order to repair gate line disconnection.The repairing crossing portion is formed in the same layer as acapacitor line and has portion overlapping a pixel electrode and asource electrode.

However, a method for repairing a liquid crystal display devicedescribed in Japanese Laid-Open Patent Publication No. 5-333373 has thefollowing problem: when disconnection is repaired, a pixel adjacent to apixel corresponding to the disconnected location does not functionnormally, resulting in a pixel defect.

SUMMARY OF THE INVENTION

In order to overcome the problems described above, preferred embodimentsof the present invention provide a structure and method of repairingdisconnection while suppressing generation of pixel defects.

A preferred embodiment according of the present invention includes afirst source line and a second source line extending in parallel witheach other between pixel electrodes, and a capacitor line crossing thefirst source line and the second source line.

More specifically, an active matrix substrate according to a preferredembodiment of the present invention includes a plurality of pixelelectrodes arranged in a matrix pattern and each forming a pixel; aplurality of gate lines each provided between the corresponding pixelelectrodes and extending in parallel with each other; a plurality offirst source lines each provided between the corresponding pixelelectrodes and extending in a direction crossing an extending directionof the gate lines; a plurality of switching elements providedcorresponding to the respective pixel electrodes and connected to therespective pixel electrodes, the respective gate lines, and therespective first source lines; a plurality of capacitor lines eachprovided between the corresponding gate lines and extending in parallelwith each other; and a plurality of second source lines each providedbetween the corresponding pixel electrodes and extending in parallelwith the first source lines.

With the above-described structure, when a gate line has disconnection,each of the second source lines provided along both sides of a pixelelectrode of a pixel corresponding to the disconnected location of thegate line is cut at a position located beyond a capacitor line extendingacross the pixel electrode of the pixel corresponding to thedisconnected location and a position located beyond the disconnectedgate line. Each of source line bypassing portions thus formed has aportion overlapping this capacitor line and a portion overlapping thedisconnected gate line. In addition, the capacitor line extending acrossthe pixel electrode of the pixel corresponding to the disconnectedlocation is cut at a position located beyond each second source lineprovided along both sides of the pixel electrode of the pixelcorresponding to the disconnected location. A capacitor line bypassingportion thus formed has a portion overlapping one of the second sourcelines and a portion overlapping the other second source line.Thereafter, the respective portions of the source line bypassingportions overlapping the gate line is connected with the disconnectedgate line, and the respective portions of the source line bypassingportions overlapping the capacitor line are connected with the capacitorline bypassing portion. As a result, a scanning signal is supplied tothe downstream of the disconnected location of the gate line through thesource line bypassing portions and the capacitor bypassing portion.

When a source line, that is, a first source line connected to switchingelements, has disconnection, a capacitor line extending across a pixelelectrode of a pixel corresponding to the disconnected location is cutat positions located outside the disconnected first source line and asecond source line adjacent to the first source line. A capacitor linebypassing portion thus formed has a portion overlapping the disconnectedfirst source line and a portion overlapping the second source lineadjacent to the disconnected first source line. Thereafter, the portionof the capacitor line bypassing portion overlapping the first sourceline is connected with the disconnected first source line, and theportion of the capacitor line bypassing portion overlapping the secondsource line is connected with the second source line. As a result, adata signal is supplied to the downstream of the disconnected locationof the first source line through the second source line and thecapacitor line bypassing portion.

Unlike a conventional method, it is not necessary to use a pixelelectrode as a bypass for repairing disconnection. Therefore,disconnection can be repaired while suppressing generation of pixeldefects.

Moreover, since the gate lines and the capacitor lines are formedindependently, load on the gate line is reduced and signal delay on thegate line can be improved.

The first source line and the second source line may be connected toeach other.

In the above-described structure, a data signal is applied to both thefirst source line and the second source line. Therefore, whendisconnection of a source line, more specifically, disconnection of afirst source line connected to switching elements, is repaired and asecond source line is used, it is not necessary to apply a data signaldirectly to the second source line and to connect the first source lineand the second source line to each other.

Each of the capacitor lines may be formed by a first capacitor line anda second capacitor line that extend in parallel with each other.

In the above-described structure, when disconnection of a gate line or asource line is repaired, for example, a portion of the first capacitorline is cut to form a capacitor line bypassing portion. However, sincethe second capacitor line is not cut and functions as an auxiliarycapacitor, disconnection can be repaired while suppressing degradationin display quality as much as possible.

The first capacitor line and the second capacitor line may be connectedto each other.

In the above-described structure, a connection terminal with an externaldriving circuit can be shared and it is not necessary to provide anadditional external driving circuit.

Each of the capacitor lines may be extended at every pixel so as to havea capacitor line extension portion extending along the capacitor lineand having a portion overlapping a corresponding first source line and aportion overlapping a corresponding second source line.

In the above-described structure, when a capacitor line hasdisconnection, a first source line and a second source line provided onboth sides of a pixel electrode of a pixel corresponding to thedisconnected location of the capacitor line are cut in order to formsource line bypassing portions each having a portion overlapping thecapacitor line and a portion overlapping the capacitor line extensionportion. Each of the source line bypassing portions is then connected tothe disconnected capacitor line and the capacitor line extensionportion.

An auxiliary capacitor signal can thus be supplied to the downstream ofthe disconnected location of the capacitor line through the source linebypassing portions and the capacitor line extension portion.Accordingly, disconnection of the capacitor line can be repaired whilesuppressing generation of pixel defects.

Capacitor electrodes may be provided so as to overlap the respectivecapacitor lines with a dielectric film interposed therebetween.

In the above-described structure, an auxiliary capacitor is formed by acapacitor line, a capacitor electrode, and a dielectric film such as agate insulating film between the capacitor line and the capacitorelectrode. This is preferably applied in the case where an interlayerinsulating film on the order of several microns is formed from aphotosensitive resin or the like between the layer in which the pixelelectrodes are formed and the layer in which the first source lines andthe second source lines are formed. Therefore, the first source linesand the second source lines can be formed so as to overlap thecorresponding pixel electrodes. This structure increases an effectivepixel area, enabling improvement in an aperture ratio.

An interlayer insulating film may be provided between the switchingelements and the capacitor electrodes and the pixel electrodes. Eachswitching element may have a drain electrode connected to thecorresponding pixel electrode, and the drain electrodes and thecapacitor electrodes are connected to the respective pixel electrodesthrough respective contact holes formed in the interlayer insulatingfilm.

In the above-described structure, even when a capacitor line and acapacitor electrode are short-circuited and an auxiliary capacitorformed between the capacitor line and the capacitor electrode is cut andseparated, that is, even when an auxiliary capacitor having a capacitorelectrode connected to a pixel electrode through one contact hole is cutand separated, a data signal from the first source line is supplied tothe pixel electrode through another contact hole. Therefore, pixeldefects resulting from a short-circuited auxiliary capacitor can berepaired.

The drain electrode may be extended and connected to a correspondingcapacitor electrode.

In the above-described structure, even when a drain electrode and acorresponding pixel electrode are electrically disconnected from eachother due to a defective contact hole formed in the interlayerinsulating film on the drain electrode, a data signal can be supplied tothe pixel electrode through the extended portion of the drain electrode.

Moreover, even when the extended portion of the drain electrode hasdisconnection, a data signal is supplied to the capacitor electrodethrough the contact hole formed in the interlayer insulating film on thedrain electrode and the pixel electrode.

Each pixel electrode may have a slit portion for dividing orientation ofliquid crystal molecules or a projection for controlling orientation ofliquid crystal molecules so that the slit portion and the projectionoverlap a corresponding capacitor line.

In the above-described structure, the region where the slit portion fordividing orientation of liquid crystal molecules or the projection forcontrolling orientation of liquid crystal molecules is formed usuallydoes not function as a transparent region. Therefore, by forming eachcapacitor line so that the capacitor line overlaps this region,reduction in the aperture ratio resulting from formation of an auxiliarycapacitor can be suppressed. Such an active matrix substrate ispreferably used in an MVA mode liquid crystal display device.

Adjacent pixels of the plurality of pixels may form a pixel group, andat least two pixels of the pixel group may be different in luminancewhen an image is displayed.

In the above-described structure, in an active matrix substrate in whichpixels of the pixel group are individually driven by respectiveswitching elements, that is, in an active matrix substrate capable ofmulti-pixel driving, both a bright pixel and a dark pixel can be presentin each pixel group, and intermediate gray scales can be expressed byarea gradation. As a result, whitening at oblique viewing angles on thedisplay screen of the liquid crystal display device can be improved. Forexample, each pixel group can have both a bright pixel and a dark pixelas described above when signal voltages of opposite phases are appliedto the capacitor lines extending across the corresponding pixelelectrodes of the pixel group. More specifically, area gradationtechnology uses two kinds of Cs waveform voltages, that is, a Cswaveform voltage (Cs polarity +) contributing to pushing up a drainsignal voltage (Vs) supplied from the source line at timing forcapacitive coupling when a gate signal is off, and a Cs waveform voltage(Cs polarity −) contributing to pushing down the Vs. By using the areagradation technology, an effective voltage to be applied to each pixelgroup is varied on a pixel by pixel basis by capacitive coupling of theCs waveform voltage, Cs capacitor, and liquid crystal capacitor, wherebybright and dark pixels can be formed. Examples of such a pixel divisionstructure for providing display by using pixel division of each pixelgroup include a 1:1 pixel division structure in which the area of thebright pixel and the area of the dark pixel are equal to each other anda 1:3 pixel division structure in which the area of the bright pixel isone third of the area of the dark pixel. Among them, the 1:3 pixeldivision structure is particularly effective as a measure for whiteningat oblique viewing angles on the display screen of the liquid crystaldisplay device (a measure to implement a wider viewing angle).

Accordingly, disconnection can be repaired also in the active matrixsubstrate capable of multi-pixel driving without degrading the effect ofimproving whitening.

Each of an area of a region where each first source line overlaps acorresponding capacitor line and an area of a region where each secondsource line overlaps a corresponding capacitor line is preferably about25 μm² or more.

In the above-described structure, a sufficient laser radiation region isensured in the process of melting an insulating film between the firstsource line and the second source line and the capacitor line by using ayttrium-aluminum-garnet (YAG) laser or the like. As a result, improvedreliability of electric conduction between the first source line and thesecond source line and the capacitor line can be implemented.

According to another preferred embodiment of the present invention, adisplay device includes the active matrix substrate according to theabove-described preferred embodiment of the present invention.

In the above-described structure, disconnection in the active matrixsubstrate is repaired while suppressing generation of pixel defects.Therefore, manufacturing yield of the display device can be improved.

According to a preferred embodiment of the present invention, atelevision apparatus includes the display device according to anotherpreferred embodiment of the present invention and a tuner portion forreceiving television broadcasting.

In the above-described structure, disconnection in the active matrixsubstrate of the display device is repaired while suppressing generationof pixel defects. Therefore, manufacturing yield of the televisionapparatus can be improved.

In a manufacturing method of an active matrix substrate according to apreferred embodiment of the present invention, the active matrixsubstrate includes a plurality of pixel electrodes arranged in a matrixpattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extending inparallel with each other, a plurality of first source lines eachprovided between the corresponding pixel electrodes and extending in adirection crossing an extending direction of the gate lines, a pluralityof switching elements provided corresponding to the respective pixelelectrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, and a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines.

The manufacturing method preferably includes the step of detectingdisconnection of a gate line; the step of forming a source linebypassing portion by cutting each second source line provided along bothsides of a pixel electrode of a pixel corresponding to a disconnectedlocation of the gate line detected in the disconnection detecting stepat a position located beyond a capacitor line extending across the pixelelectrode and a position located beyond the disconnected gate line, sothat each source line bypassing portion has a portion overlapping thecapacitor line and a portion overlapping the gate line; the step offorming a capacitor line bypassing portion by cutting the capacitor lineextending across the pixel electrode of the pixel corresponding to thedisconnected location of the gate line detected in the disconnectiondetecting step at a position located beyond each second source lineprovided along both sides of the pixel electrode of the pixelcorresponding to the disconnected location, so that the capacitor linebypassing portion has a portion overlapping one of the second sourcelines and a portion overlapping another second source line; and the stepof connecting the respective portions of the source line bypassingportions overlapping the gate line with the disconnected gate line andconnecting the respective portions of the source line bypassing portionsoverlapping the capacitor line with the capacitor line bypassingportion.

According to the above-described method, in the step of forming a sourceline bypassing portion, the source line bypassing portions each having aportion overlapping the disconnected gate line and a portion overlappingthe capacitor line are formed on both sides of the pixel electrode ofthe pixel corresponding to the disconnected location of the gate linedetected in the disconnection detecting step. In the step of forming acapacitor line bypassing portion, the capacitor line bypassing portionhaving portions respectively overlapping the second source linesprovided on both sides of the pixel electrode of the pixel correspondingto the disconnected location of the gate line is formed. In theconnecting step, the source line bypassing portions are connected to thedisconnected gate line and the capacitor line bypassing portion. Ascanning signal is thus supplied to the downstream of the disconnectedlocation of the gate line through the source line bypassing portions andthe capacitor line bypassing portion. Unlike a conventional method, itis not necessary to use a pixel electrode as a bypass for repairingdisconnection. Therefore, disconnection of the gate line is repairedwhile suppressing generation of pixel defects.

In a manufacturing method of an active matrix substrate according to apreferred embodiment of the present invention, the active matrixsubstrate includes a plurality of pixel electrodes arranged in a matrixpattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extending inparallel with each other, a plurality of first source lines eachprovided between the corresponding pixel electrodes and extending in adirection crossing an extending direction of the gate lines, a pluralityof switching elements provided corresponding to the respective pixelelectrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, and a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines. Themanufacturing method includes: the step of detecting disconnection of afirst source line; the step of forming a capacitor line bypassingportion by cutting a capacitor line extending across a pixel electrodeof a pixel corresponding to a disconnected location of the first sourceline detected in the disconnection detecting step at positions locatedoutside the disconnected first source line and a second source lineadjacent to the first source line, so that the capacitor line bypassingportion has a portion overlapping the first source line and a portionoverlapping the second source line; and the step of connecting theportion of the capacitor line bypassing portion overlapping the firstsource line with the disconnected first source line and connecting theportion of the capacitor line bypassing portion overlapping the secondsource line with the second source line.

According to the above-described method, in the step of forming acapacitor line bypassing portion, the capacitor line bypassing portionhaving a portion overlapping the first source line and a portionoverlapping the second source line is formed so as to extend in thepixel electrode of the pixel corresponding to the disconnected locationof the first source line detected in the disconnection detecting step.In the connecting step, the capacitor line bypassing portion isconnected to the first source line and the second source line. As aresult, a data signal is supplied to the downstream of the disconnectedlocation of the source line through the second source line and thecapacitor line bypassing portion. Accordingly, disconnection of thesource line can be repaired while suppressing generation of pixeldefects.

In a manufacturing method of an active matrix substrate according to apreferred embodiment of the present invention, the active matrixsubstrate includes a plurality of pixel electrodes arranged in a matrixpattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extending inparallel with each other, a plurality of first source lines eachprovided between the corresponding pixel electrodes and extending in adirection crossing an extending direction of the gate lines, a pluralityof switching elements provided corresponding to the respective pixelelectrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines, and acapacitor line extension portion extended from each capacitor line atevery pixel so as to extend along the capacitor line and having aportion overlapping a corresponding first source line and a portionoverlapping a corresponding second source line. The manufacturing methodincludes: the step of detecting disconnection of a capacitor line; thestep of forming a source line bypassing portion by cutting a firstsource line and a second source line provided along both sides of apixel electrode of a pixel corresponding to a disconnected location ofthe capacitor line detected in the disconnection detecting step at aposition located beyond the disconnected capacitor line and a positionlocated beyond a capacitor line extension portion extended from thecapacitor line, so that each source line bypassing portion has a portionoverlapping the capacitor line and a portion overlapping the capacitorline extension portion; and the step of connecting the respectiveportions of the source line bypassing portions overlapping the capacitorline with the disconnected capacitor line and connecting the respectiveportions of the source line bypassing portions overlapping the capacitorline extension portion with the capacitor line extension portion.

According to the above-described method, in the step of forming a sourceline bypassing portion, the source line bypassing portions each having aportion overlapping the capacitor line and a portion overlapping thecapacitor line extension portion are formed on both sides of the pixelelectrode of the pixel corresponding to the disconnected location of thecapacitor line detected in the disconnection detecting step. In theconnecting step, the source line bypassing portions are connected to thedisconnected capacitor line and the capacitor line extension portion. Anauxiliary capacitor signal is thus supplied to the downstream of thedisconnected location of the capacitor line through the source linebypassing portions and the capacitor line extension portion. Therefore,disconnection of the capacitor line is repaired while suppressinggeneration of pixel defects.

The cutting and the connection may be conducted by laser radiation.

The above-described method enables reliable cutting and connection ofwirings.

The cutting may be conducted by a fourth harmonic wave of a YAG laser.

The above-described method improves reliability of breakage andseparation of the first source line, the second source line, and thecapacitor line by laser radiation.

The connection may be conducted by a second harmonic wave of a YAGlaser.

The above-described method improves reliability of laser fusion bondingbetween the source line bypassing portion and the gate line, between thesource line bypassing portion and the capacitor line bypassing portion,between the capacitor line bypassing portion and the first source line,between the capacitor line bypassing portion and the second source line,between the source line bypassing portion and the capacitor line, andbetween the source line bypassing portion and the capacitor lineextension portion.

In a manufacturing method of a display device having an active matrixsubstrate according to a preferred embodiment of the present invention,the active matrix substrate includes a plurality of pixel electrodesarranged in a matrix pattern and each forming a pixel, a plurality ofgate lines each provided between the corresponding pixel electrodes andextending in parallel with each other, a plurality of first source lineseach provided between the corresponding pixel electrodes and extendingin a direction crossing an extending direction of the gate lines, aplurality of switching elements provided corresponding to the respectivepixel electrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, and a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines. Themanufacturing method includes: the step of detecting disconnection of agate line; the step of forming a source line bypassing portion bycutting each second source line provided along both sides of a pixelelectrode of a pixel corresponding to a disconnected location of thegate line detected in the disconnection detecting step at a positionlocated beyond a capacitor line extending across the pixel electrode anda position located beyond the disconnected gate line, so that eachsource line bypassing portion has a portion overlapping the capacitorline and a portion overlapping the gate line; the step of forming acapacitor line bypassing portion by cutting the capacitor line extendingacross the pixel electrode of the pixel corresponding to thedisconnected location of the gate line detected in the disconnectiondetecting step at a position located beyond each second source lineprovided along both sides of the pixel electrode of the pixelcorresponding to the disconnected location, so that the capacitor linebypassing portion has a portion overlapping one of the second sourcelines and a portion overlapping another second source line; and the stepof connecting the respective portions of the source line bypassingportions overlapping the gate line with the disconnected gate line andconnecting the respective portions of the source line bypassing portionsoverlapping the capacitor line with the capacitor line bypassingportion.

According to the above-described method, in the step of forming a sourceline bypassing portion, the source line bypassing portions each having aportion overlapping the disconnected gate line and a portion overlappingthe capacitor line are formed on both sides of the pixel electrode ofthe pixel corresponding to the disconnected location of the gate linedetected in the disconnection detecting step. In the step of forming acapacitor line bypassing portion, the capacitor line bypassing portionhaving portions respectively overlapping the second source linesprovided on both sides of the pixel electrode of the pixel correspondingto the disconnected location of the gate line is formed. In theconnecting step, the source line bypassing portions are connected to thedisconnected gate line and the capacitor line bypassing portion. Ascanning signal is thus supplied to the downstream of the disconnectedlocation of the gate line through the source line bypassing portions andthe capacitor line bypassing portion. Unlike a conventional method, itis not necessary to use a pixel electrode as a bypass for repairingdisconnection. Therefore, disconnection of the gate line is repairedwhile suppressing generation of pixel defects.

In a manufacturing method of a display device having an active matrixsubstrate according to a preferred embodiment of the present invention,the active matrix substrate includes a plurality of pixel electrodesarranged in a matrix pattern and each forming a pixel, a plurality ofgate lines each provided between the corresponding pixel electrodes andextending in parallel with each other, a plurality of first source lineseach provided between the corresponding pixel electrodes and extendingin a direction crossing an extending direction of the gate lines, aplurality of switching elements provided corresponding to the respectivepixel electrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, and a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines. Themanufacturing method includes the step of detecting disconnection of afirst source line; the step of forming a capacitor line bypassingportion by cutting a capacitor line extending across a pixel electrodeof a pixel corresponding to a disconnected location of the first sourceline detected in the disconnection detecting step at positions locatedoutside the disconnected first source line and a second source lineadjacent to the first source line, so that the capacitor line bypassingportion has a portion overlapping the first source line and a portionoverlapping the second source line; and the step of connecting theportion of the capacitor line bypassing portion overlapping the firstsource line with the disconnected first source line and connecting theportion of the capacitor line bypassing portion overlapping the secondsource line with the second source line.

According to the above-described method, in the step of forming acapacitor line bypassing portion, the capacitor line bypassing portionhaving a portion overlapping the first source line and a portionoverlapping the second source line is formed so as to extend in thepixel electrode of the pixel corresponding to the disconnected locationof the first source line detected in the disconnection detecting step.In the connecting step, the capacitor line bypassing portion isconnected to the first source line and the second source line. As aresult, a data signal is supplied to the downstream of the disconnectedlocation of the source line through the second source line and thecapacitor line bypassing portion. Accordingly, disconnection of thesource line can be repaired while suppressing generation of pixeldefects.

In a manufacturing method of a display device having an active matrixsubstrate according to a preferred embodiment of the present invention,the active matrix substrate includes a plurality of pixel electrodesarranged in a matrix pattern and each forming a pixel, a plurality ofgate lines each provided between the corresponding pixel electrodes andextending in parallel with each other, a plurality of first source lineseach provided between the corresponding pixel electrodes and extendingin a direction crossing an extending direction of the gate lines, aplurality of switching elements provided corresponding to the respectivepixel electrodes and connected to the respective pixel electrodes, therespective gate lines, and the respective first source lines, aplurality of capacitor lines each provided between the correspondinggate lines and extending in parallel with each other, a plurality ofsecond source lines each provided between the corresponding pixelelectrodes and extending in parallel with the first source lines, and acapacitor line extension portion extended from each capacitor line atevery pixel so as to extend along the capacitor line and having aportion overlapping a corresponding first source line and a portionoverlapping a corresponding second source line. The manufacturing methodincludes: the step of detecting disconnection of a capacitor line; thestep of forming a source line bypassing portion by cutting a firstsource line and a second source line provided along both sides of apixel electrode of a pixel corresponding to a disconnected location ofthe capacitor line detected in the disconnection detecting step at aposition located beyond the disconnected capacitor line and a positionlocated beyond a capacitor line extension portion extended from thecapacitor line, so that each source line bypassing portion has a portionoverlapping the capacitor line and a portion overlapping the capacitorline extension portion; and the step of connecting the respectiveportions of the source line bypassing portions overlapping the capacitorline with the disconnected capacitor line and connecting the respectiveportions of the source line bypassing portions overlapping the capacitorline extension portion with the capacitor line extension portion.

According to the above-described method, in the step of forming a sourceline bypassing portion, the source line bypassing portions each having aportion overlapping the capacitor line and a portion overlapping thecapacitor line extension portion are formed on both sides of the pixelelectrode of the pixel corresponding to the disconnected location of thecapacitor line detected in the disconnection detecting step. In theconnecting step, the source line bypassing portions are connected to thedisconnected capacitor line and the capacitor line extension portion. Anauxiliary capacitor signal is thus supplied to the downstream of thedisconnected location of the capacitor line through the source linebypassing portions and the capacitor line extension portion. Therefore,disconnection of the capacitor line is repaired while suppressinggeneration of pixel defects.

The cutting and the connection may be conducted by laser radiation.

The above-described method enables reliable cutting and connection ofwirings.

The cutting may be conducted by a fourth harmonic wave of a YAG laser.

The above-described method improves reliability of breakage andseparation of the first source line, the second source line, and thecapacitor line by laser radiation.

The connection may be conducted by a second harmonic wave of a YAGlaser.

The above-described method improves reliability of laser fusion bondingbetween the source line bypassing portion and the gate line, between thesource line bypassing portion and the capacitor line bypassing portion,between the capacitor line bypassing portion and the first source line,between the capacitor line bypassing portion and the second source line,between the source line bypassing portion and the capacitor line, andbetween the source line bypassing portion and the capacitor lineextension portion.

According to various preferred embodiments of the present invention, afirst source line and a second source line extending in parallel witheach other are provided between pixel electrodes, and a capacitor lineextends in a direction crossing an extending direction of the firstsource line and the second source line. Therefore, disconnection can berepaired while suppressing generation of pixel defects, andmanufacturing yield of an active matrix substrate and a display deviceincluding the same can be improved.

These and other features, elements, steps, advantages, andcharacteristics of the present invention will be apparent from thefollowing description of preferred embodiments with reference to theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a plan view of an active matrix substrate according to a firstpreferred embodiment of the present invention.

FIG. 2 is a cross-sectional view of the active matrix substrate (aliquid crystal display panel) taken along line II-II in FIG. 1.

FIG. 3 is a block diagram of a liquid crystal display device having aliquid crystal display panel.

FIG. 4 is a block diagram of a television apparatus having a liquidcrystal display device.

FIG. 5 is a plan view of the active matrix substrate of the firstpreferred embodiment after gate line disconnection is repaired.

FIG. 6 is a plan view of an active matrix substrate according to asecond preferred embodiment of the present invention.

FIG. 7 is a plan view of the active matrix substrate of the secondpreferred embodiment after capacitor line disconnection is repaired.

FIG. 8 is a plan view of an active matrix substrate of a third preferredembodiment after source line disconnection is repaired.

FIG. 9 is a plan view of an active matrix substrate according to afourth embodiment of the present invention.

FIG. 10 is a cross-sectional view of the active matrix substrate takenalong line X-X in FIG. 9.

FIG. 11 is a plan view of an active matrix substrate according to afifth preferred embodiment of the present invention.

FIG. 12 is a plan view of an active matrix substrate according to asixth preferred embodiment of the present invention.

FIG. 13 is a plan view of an active matrix substrate according to aseventh preferred embodiment of the present invention.

FIG. 14 is a plan view of a conventional active matrix 120.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Hereinafter, preferred embodiments of the present invention will bedescribed in detail with reference to the accompanying drawings. Itshould be understood that the present invention is not limited to thepreferred embodiments described below.

First Preferred Embodiment

FIGS. 1 through 5 show an active matrix substrate, a display device, anda television apparatus according to a first preferred embodiment of thepresent invention. Although a liquid crystal display device is shown asan example of the display device in this preferred embodiment, thepresent invention is also applicable to other display devices such as anorganic EL (electroluminescent) display device.

FIG. 4 is a block diagram of a television apparatus 70 of this preferredembodiment.

As shown in FIG. 4, the television apparatus 70 includes a tuner portion65 for receiving television broadcasting and outputting a video signaland a liquid crystal display device 60 for displaying an image based onthe video signal supplied from the tuner portion 65.

FIG. 3 is a block diagram of the liquid crystal display device 60 ofthis preferred embodiment.

As shown in FIG. 3, the liquid crystal display device 60 includes: a Y/Cseparation circuit 31 for separating a video signal supplied from thetuner portion 65 or the like into a luminance signal and a color signal;a video chroma circuit 32 for converting the luminance signal and thecolor signal into an analog RGB signal of light's three primary colors:R (red), G (green), and B (blue); an A-D (analog-to-digital) converter33 for converting the analog RGB signal into a digital RGB signal; aliquid crystal controller 34 for receiving the digital RGB signal; aliquid crystal display panel 50 for receiving the digital RGB signalfrom the liquid crystal controller 34 at a prescribed timing andsubstantially displaying an image; a gradation circuit 36 for supplyinga gray-scale voltage to the liquid crystal display panel 50; a backlight38 for supplying light to the liquid crystal display panel 50; abacklight driving circuit 37 for driving the backlight 38; and amicrocomputer 35 for controlling the whole system having theabove-described structure.

In addition to the video signal based on television broadcasting asdescribed above, various video signals such as a video signal capturedby a camera and a video signal supplied over the Internet can be used asa video signal to be supplied to the Y/C separation circuit 31.

FIG. 2 is a cross-sectional view of the liquid crystal display panel 50of this preferred embodiment.

As shown in FIG. 2, the liquid crystal display panel 50 includes anactive matrix substrate 20 a and a counter substrate 30 which face eachother, and a liquid crystal layer 40 interposed between the substrates20 a and 30.

FIG. 1 is a plan view of the active matrix substrate 20 a of thispreferred embodiment. FIG. 2 is a cross-sectional view of the liquidcrystal display panel 50 taken along line II-II in FIG. 1.

As shown in FIG. 1, the active matrix substrate 20 a includes aplurality of gate lines 1 extending substantially in parallel with eachother, a plurality of source lines 3 extending substantially in parallelwith each other in the direction perpendicular to the extendingdirection of the gate lines 1, and capacitor lines 2 each extendingbetween the corresponding gate lines 1. A TFT 5 is provided at eachintersection of the gate lines 1 and the source lines 3. A pixelelectrode 12 forming a pixel is provided in a display region surroundedby a pair of gate lines 1 and a pair of source lines 3 corresponding toeach TFT 5.

Each source line 3 is formed by a first source line 3 a connected to acorresponding TFT 5 and a second source line 3 b adjacent to the firstsource line 3 a and connected to the first source line 3 a in everypixel.

Each capacitor line 2 is formed by a first capacitor line 2 a and asecond capacitor line 2 b. The first capacitor line 2 a and the secondcapacitor line 2 b extend in parallel with each other and are connectedto each other in every pixel.

As shown in FIGS. 1 and 2, the TFT 5 includes: a gate electrode 1 aprotruding laterally from the gate line 1; a semiconductor layer 4formed on the gate electrode 1 a with a gate insulating film 7interposed therebetween and formed by an intrinsic amorphous siliconlayer and an n+amorphous silicon layer; a source electrode 3 c formedover the semiconductor layer 4 and protruding laterally from the firstsource line 3 a; and a drain electrode 3 d facing the source electrode 3c over the semiconductor layer 4.

A capacitor electrode 6 is formed in every pixel in a layer above thegate insulating film 7 so as to overlap the corresponding capacitor line2. An interlayer insulating film 15 is formed so as to cover the TFTs 5and the capacitor electrodes 6. The interlayer insulating film 15 isformed by an upper layer and a lower layer, that is, a first interlayerinsulating film 8 and a second interlayer insulating film 9. Pixelelectrodes 12 are formed in a layer above the interlayer insulating film15. Each pixel electrode 12 is connected to a corresponding drainelectrode 3 d and a corresponding capacitor electrode 6 through contactholes 11 a and 11 b, respectively. An alignment film (not shown) isformed in a layer above the pixel electrodes 12.

The gate insulating film 7 (a dielectric film) is interposed between thecapacitor line 2 and the capacitor electrode 6. An auxiliary capacitoris formed by the capacitor line 2, the gate insulating film 7, and thecapacitor electrode 6.

The counter substrate 30 has a multi-layered structure. In other words,a color filter layer 13, a common electrode 14, and an alignment film(not shown) are sequentially formed on the insulating substrate 10 asthe counter substrate 30.

The color filter layer 13 has a colored layer of red, green, or blue inevery pixel of the active matrix substrate 20 a. Each picture element isformed by three pixels of red, green, and blue.

The liquid crystal layer 40 includes nematic liquid crystal molecules (aliquid crystal material) having electrooptical characteristics.

In the liquid crystal display panel 50 having the above-describedstructure, a pixel is formed for every pixel electrode 12. In eachpixel, when the TFT 5 is turned on in response to a scanning signalreceived from the gate line 1 through the gate electrode 1 a, a datasignal is applied from the source line 3 and prescribed charges arewritten to the pixel electrode 12 through the source electrode 3 c andthe drain electrode 3 d. As a result, a potential difference isgenerated between the pixel electrode 12 and the common electrode 14,whereby a prescribed voltage is applied to a liquid crystal capacitorformed by the liquid crystal layer 40 and the auxiliary capacitor. Anorientation state of the liquid crystal molecules changes according tothe applied voltage level. In the liquid crystal display panel 50, animage is displayed by adjusting a transmittance of incident light fromthe outside (the backlight 38) by using this property of the liquidcrystal molecules.

Hereinafter, an example of a manufacturing method of the liquid crystaldisplay panel 50 of the liquid crystal display device 60 according tothe first preferred embodiment of the present invention will bedescribed.

The liquid crystal display panel 50 is preferably manufactured by thefollowing three steps as described below: the step of fabricating anactive matrix substrate; the step of fabricating a counter substrate;and the step of fabricating a liquid crystal display panel. Aninspection step is conducted after at least one of the step offabricating an active matrix substrate and the step of fabricating aliquid crystal display panel. In the case where disconnection isdetected in the inspection step, the step of repairing the disconnectionis added after the inspection step.

The step of fabricating an active matrix substrate will now bedescribed.

First, a metal film of titanium, chromium, aluminum, molybdenum,tantalum, tungsten, copper, or the like, an alloy film of anycombination of these metals, or a laminated film of any combination ofthese metals (with a thickness of 1,000 Å to 3,000 Å) is formed on thewhole surface of an insulating substrate 10 such as a glass substrate bya sputtering method. The resultant substrate is then patterned byphotolithography technology (Photo Engraving Process; hereinafter,referred to as “PEP technology”) to form gate lines 1, gate electrodes 1a, and capacitor lines 2.

An inorganic insulating film of silicon nitride, silicon oxide, or thelike (with a thickness of about 3,000 Å to about 5,000 Å) is then formedby a CVD (Chemical Vapor Deposition) method on the whole substratehaving the gate lines 1 and the like formed thereon. A gate insulatingfilm 7 is thus formed.

Thereafter, an intrinsic amorphous silicon film (with a thickness of1,000 Å to 3,000 Å) and a phosphorus-doped n+ amorphous silicon film(with a thickness of 400 Å to 700 Å) are sequentially formed by a CVDmethod on the whole substrate having the gate insulating film 7 thereon.The films thus formed are then patterned into an island shape over thegate electrode 1 a by PEP technology to form a silicon lamination of theintrinsic amorphous silicon film and the n+ amorphous silicon layer.

Thereafter, a metal film of titanium, chromium, aluminum, molybdenum,tantalum, tungsten, copper, or the like, an alloy film of anycombination of these metals, or a laminated film of any combination ofthese metals (with a thickness of 1,000 Å to 3,000 Å) is formed by asputtering method over the whole substrate having the silicon laminationthereon. The resultant substrate is then patterned by PEP technology toform first source lines 3 a, second source lines 3 b, source electrodes3 c, drain electrodes 3 d, and capacitor electrodes 6.

Thereafter, the n+ amorphous silicon layer of the silicon lamination isetched by using the source electrodes 3 c and the drain electrodes 3 das a mask in order to form a semiconductor layer 4 having channelportions.

The semiconductor layer 4 may be formed by an amorphous silicon film asdescribed above. Alternatively, a polysilicon film may be used or anamorphous silicon film and a polysilicon film may be laser-annealed foran improved crystalline property. This increases the electron mobilityin the semiconductor layer and thus improves characteristics of the TFT5.

An inorganic insulating film of silicon nitride, silicon oxide, or thelike (with a thickness of 2,000 Å to 5,000 Å) is then formed by a CVDmethod on the whole substrate having the source lines 3 (the firstsource lines 3 a and the second source lines 3 b) and the like thereon.A first interlayer insulating film 8 is thus formed.

A photosensitive acrylic resin (with a thickness of 2 μm to 4 μm) isthen formed by a die coating method on the whole substrate having thefirst interlayer insulating film 8 thereon. A second interlayerinsulating film 9 is thus formed.

The first interlayer insulating film 8 and the second interlayerinsulating film 9 form an interlayer insulating film 15. A portion ofthe interlayer insulating film 15 which corresponds to the drainelectrodes 3 d and the capacitor electrodes 6 is removed by an etchingmethod to form contact holes 11 a and 11 b.

A transparent conductive film of ITO (Indium Tin Oxide), IZO (IndiumZinc Oxide), zinc oxide, tin oxide, or the like (with a thickness of1,000 Å to 2,000 Å) is then formed by a sputtering method on the wholesubstrate having the interlayer insulating film 15 thereon. Theresultant substrate is then patterned by PEP technology to form pixelelectrodes 12.

Finally, a polyimide resin is printed with a thickness of 500 Å to 1,000Å on the whole substrate having the pixel electrodes 12 thereon. Theresultant substrate is then baked and rubbed in one direction with arotating cloth to form an alignment film.

The active matrix substrate 20 a can thus be fabricated (manufactured).

Hereinafter, the step of fabricating a counter substrate will bedescribed.

First, a Cr (chromium) thin film or a resin containing a black pigmentis formed on an insulating substrate 10 such as a glass substrate. Thefilm thus formed is then patterned by PEP technology to form a blackmatrix.

A colored layer of red, green, or blue (with a thickness of about 2 μm)is then patterned in each space of the black matrix by a pigmentdispersion method or the like in order to form a color filter layer 13.

A transparent conductive film of ITO, IZO, zinc oxide, tin oxide, or thelike (with a thickness of about 1,000 Å) is then formed on the wholesubstrate having the color filter layer 13 thereon to form a commonelectrode 14.

Finally, a polyimide resin is printed with a thickness of 500 Å to 1,000Å on the whole substrate having the common electrode 14 thereon. Theresultant substrate is then baked and rubbed in one direction with arotating cloth to form an alignment film.

A counter substrate is thus fabricated (manufactured).

Hereinafter, the step of fabricating a liquid crystal display panel willbe described.

First, a sealing material such as a thermosetting epoxy resin is appliedto one of the active matrix substrate 20 a and the counter substrate 30fabricated as described above by a screen printing method. The sealingmaterial is applied with a frame pattern except for a portioncorresponding to a liquid crystal inlet port. Spherical spacers ofplastic or silica are sprayed onto the other substrate. The sphericalspacers have a diameter equal to the thickness of the liquid crystallayer 40.

Thereafter, the active matrix substrate 20 a and the counter substrate30 are bonded together and the sealing material is cured. An emptyliquid crystal display panel is thus fabricated.

Finally, a liquid crystal material is introduced into the empty liquidcrystal display panel by a dipping method. A UV (ultraviolet) curableresin is then applied to the liquid crystal inlet port and the liquidcrystal material is then sealed by UV radiation. A liquid crystal layer40 is thus formed.

The liquid crystal display panel 50 is thus fabricated (manufactured).

Hereinafter, the inspection step and the disconnection repairing stepwill be described.

First, description will be given about the case where the inspectionstep (the disconnection detecting step) is conducted after the step offabricating an active matrix substrate.

In the disconnection detecting step, disconnection (a disconnectedlocation) is detected by conducting appearance inspection andelectro-optical inspection to the active matrix substrate 20 afabricated in the step of fabricating an active matrix substrate. Theappearance inspection herein refers to the process of opticallyinspecting wiring patterns by a CCD (Charge Coupled Device) camera orthe like. The electro-optical inspection refers to the process ofplacing a modulator (an electro-optical element) so that the modulatorfaces the active matrix substrate, applying a voltage between the activematrix substrate and the modulator and allowing light to be incident,and electro-optically inspecting wiring patterns by capturing a changeof luminance of the incident light by a CCD camera.

Thereafter, detected disconnection in the active matrix substrate 20 ais repaired. In this preferred embodiment, it is assumed that a gateline 1 of the active matrix substrate 20 a has disconnection, and amethod for repairing the disconnection will be described with referenceto FIG. 5. The disconnection of the gate line 1 is repaired by thefollowing three steps, as described below: the step of forming a sourceline bypassing portion; the step of forming a capacitor line bypassingportion; and the connecting step.

First, in the step of forming a source line bypassing portion, laserbeams are emitted to locations D1, D3, D5, and D7 in FIG. 5. As aresult, the second source lines 3 b provided along both sides of a pixelelectrode 12 of a pixel corresponding to a disconnected location X of agate line 1 detected in the disconnection detecting step are cut at thepositions (D3 and D5) located beyond a first capacitor line 2 aextending across the pixel electrode 12 and the positions (D1 and D7)located beyond the disconnected gate line 1. Each of source linebypassing portions 16 a and 16 b thus formed has a portion overlappingthe first capacitor line 2 a and a portion overlapping the gate line 1.

In the step of forming a capacitor line bypassing portion, laser beamsare emitted to locations D2, D4, and D6 in FIG. 5. As a result, thefirst capacitor line 2 a extending across the pixel electrode 12 of thepixel corresponding to the disconnected location X of the gate line 1detected in the disconnection detecting step is cut at the positions (D2and D6) located beyond the respective second source lines 3 b providedalong both sides of the pixel electrode 12 of the pixel corresponding tothe disconnected location X. This first capacitor line 2 a is also cutat the joint portion D4 of the first capacitor line 2 a and the secondcapacitor line 2 b. A capacitor line bypassing portion 17 a thus formedhas a portion overlapping one of the second source lines 3 b and aportion overlapping the other second source line 3 b.

For example, a fourth harmonic wave (a wavelength of 266 nm) of a YAGlaser is used to cut the second source lines 3 b and the first capacitorline 2 a as described above.

In the connection step, laser beams are emitted to locations C1 throughC4 in FIG. 5 in order to connect the respective portions (C1 and C4) ofthe source line bypassing portions 16 a and 16 b overlapping the gateline 1 with the disconnected gate line 1 and to connect the respectiveportions (C2 and C3) of the source line bypassing portions 16 a and 16 boverlapping the first capacitor line 2 a with the capacitor linebypassing portion 17 a. For example, a second harmonic wave (awavelength of 532 nm) of a YAG laser is used for this connection of thelines.

By the above-described disconnection repairing step, a scanning signalcan be supplied to the downstream of the disconnected location X of thegate line 1 through the source line bypassing portion 16 a, thecapacitor line bypassing portion 17 a, and the source line bypassingportion 16 b as shown by arrows in FIG. 5.

Hereinafter, description will be given about the case where theinspection step (the disconnection detecting step) is conducted afterthe step of fabricating a liquid crystal display panel.

In this disconnection detecting step, disconnection (a disconnectedlocation) is detected by conducting dynamic operation inspection to theliquid crystal display panel 50 fabricated in the step of fabricating aliquid crystal display panel. More specifically, a gate inspectionsignal having a bias voltage of −10 V, a period of 16.7 milliseconds,and a pulse voltage of +15 V with a pulse width of 50 microseconds, forexample, is applied to each gate line 1 to turn on all the TFTs 5.Moreover, a source inspection signal having a potential of ±2 V andhaving its polarity inverted every 16.7 milliseconds is applied to eachsource line 3 to write charges corresponding to ±2 V to the pixelelectrode 12 through the source electrode 3 c and the drain electrode 3d of each TFT 5. At the same time, a common electrode inspection signalhaving a DC (direct-current) potential of −1 V is applied to the commonelectrode 14. At this time, a voltage is applied to the liquid crystalcapacitor formed between the pixel electrode 12 and the common electrode14 and a pixel corresponding to that pixel electrode 12 is turned on. Asa result, display changes from white display to black display in anormally white mode (the mode in which white display is provided duringno voltage application). Prescribed charges cannot be written to a pixelelectrode 12 corresponding to a pixel located along a disconnected line,and that pixel is not turned on (a bright spot). The disconnectedlocation of the line is thus detected.

Thereafter, the detected disconnection is repaired in the liquid crystaldisplay panel 50. A repairing method is substantially the same as therepairing method described above for the active matrix substrate 20 a.Therefore, detailed description thereof will be omitted. It should benoted that in the repairing method for the active matrix substrate 20 a,laser beams can be emitted from both front and back sides of the activematrix substrate 20 a. In the repairing method for the liquid crystaldisplay panel 50, however, laser beams are emitted from the side of theactive matrix substrate 20 a.

As has been described above, when the gate line 1 has disconnection inthe active matrix substrate 20 a of this preferred embodiment, thesource line bypassing portions 16 a and 16 b and the capacitor linebypassing portion 17 a are formed, and the disconnected gate line 1, thesource line bypassing portions 16 a and 16 b, and the capacitor linebypassing portion 17 a are connected to each other. A scanning signal isthus supplied to the downstream of the disconnected location X of thegate line 1 through the source line bypassing portion 16 a, thecapacitor line bypassing portion 17 a, and the source line bypassingportion 16 b. Unlike a conventional method, it is not necessary to use apixel electrode as a bypass for repairing disconnection. Therefore,disconnection can be repaired while suppressing generation of pixeldefects.

In the active matrix substrate 20 a, the gate lines 1 and the capacitorlines 2 are formed independently. Therefore, load on each gate line 1 isreduced and signal delay on each gate line 1 can be improved.

In the active matrix substrate 20 a, each capacitor line 2 is formed bythe first capacitor line 2 a and the second capacitor line 2 b. In orderto repair disconnection of the gate line 1, for example, a portion ofthe first capacitor line 2 a is cut to form a capacitor line bypassingportion 17 a. However, since the second capacitor line 2 b is not cutand functions as an auxiliary capacitor, disconnection can be repairedwhile suppressing degradation in display quality as much as possible.

Moreover, the first capacitor line 2 a and the second capacitor line 2 bare connected to each other in the active matrix substrate 20 a.Therefore, a connection terminal to an external driving circuit can beshared and it is not necessary to provide an additional external drivingcircuit.

In the active matrix substrate 20 a, the second interlayer insulatingfilm 9 on the order of several microns is formed from a photosensitiveresin or the like between the layer in which the pixel electrodes 12 areformed and the layer in which the first source lines 3 a and the secondsource lines 3 b are formed. Therefore, the first source lines 3 a andthe second source lines 3 b can be formed so as to overlap thecorresponding pixel electrodes 12. This structure increases an effectivepixel area, enabling improvement in an aperture ratio.

In the active matrix substrate 20 a, the interlayer insulating film 15is formed between each TFT 5 and each capacitor electrode 6 and eachpixel electrode 12, and the drain electrode 3 d of each TFT 5 and eachcapacitor electrode 6 are connected to a corresponding pixel electrode12 through the corresponding contact holes 11 a and 11 b formed in theinterlayer insulating film 15, respectively. Therefore, even when thecapacitor line 2 and the capacitor electrode 6 are short-circuited andan auxiliary capacitor formed between the capacitor line 2 and thecapacitor electrode 6 is cut and separated, that is, even when anauxiliary capacitor having the capacitor electrode 6 connected to thepixel electrode 12 through the contact hole 11 b is cut and separated, adata signal from the first source line 3 a is supplied to the pixelelectrode 12 through the contact hole 11 a. Therefore, pixel defectsresulting from a short-circuited auxiliary capacitor can be repaired.

Second Preferred Embodiment

FIGS. 6 and 7 are plan views of an active matrix substrate 20 baccording to this preferred embodiment. In the following preferredembodiments, the same elements as those of FIGS. 1 through 5 are denotedwith the same reference numerals and characters and detailed descriptionthereof will be omitted.

In this active matrix substrate 20 b, each capacitor line 2 is extendedat every pixel so as to have a capacitor line extension portion 2 cextending along the capacitor line 2. The capacitor line extensionportion 2 c has a portion overlapping a corresponding first source line3 a and a portion overlapping a corresponding second source line 3 b.Since the structure and effects of this active matrix substrate 20 b areotherwise the same as the structure and effects of the active matrixsubstrate 20 a described in the first preferred embodiment, detaileddescription thereof will be omitted.

Hereinafter, a method for repairing disconnection in the active matrixsubstrate 20 b having the above structure will be described. In thispreferred embodiment, a method for repairing disconnection of acapacitor line 2 of the active matrix substrate 20 b will be describedwith reference to FIG. 7. The disconnection of the capacitor line 2 isrepaired by the step of forming a source line bypassing portion and theconnecting step, as described below.

First, in the step of forming a source line bypassing portion, laserbeams are emitted to locations D1 through D4 in FIG. 7. As a result, thefirst source line 3 a and the second source lines 3 b provided alongboth sides of a pixel electrode 12 of a pixel corresponding to adisconnected location Y of a capacitor line 2 detected in thedisconnection detecting step are respectively cut at the positions (D1and D4) located beyond the disconnected capacitor line 2 and thepositions (D1 and D3) located beyond a corresponding capacitor lineextension portion 2 c extended from the capacitor line 2. Each of sourceline bypassing portions 16 c and 16 d thus formed has a portionoverlapping the capacitor line 2 and a portion overlapping the capacitorline extension portion 2 c.

In the connecting step, laser beams are emitted to locations C1 throughC4 in FIG. 7 in order to connect the respective portions (C1 and C4) ofthe source line bypassing portions 16 c and 16 d overlapping thecapacitor line 2 with the disconnected capacitor line 2 and to connectthe respective portions (C2 and C3) of the source line bypassingportions 16 c and 16 d overlapping the capacitor line extension portion2 c with the capacitor line extension portion 2 c.

By the above-described disconnection repairing step, an auxiliarycapacitor signal can be supplied to the downstream of the disconnectedlocation Y of the capacitor line 2 through the source line bypassingportion 16 c, the capacitor line extension portion 2 c, and the sourceline bypassing portion 16 d as shown by arrows in FIG. 7.

As has been described above, in the active matrix substrate 20 b of thispreferred embodiment, each capacitor line 2 is extended at every pixelso as to have a capacitor line extension portion 2 c. Therefore, when acapacitor line 2 has disconnection, the source line bypassing portions16 c and 16 d are formed, and the disconnected capacitor line 2, thesource line bypassing portions 16 c and 16 d, and the capacitor lineextension portion 2 c are connected to each other. An auxiliarycapacitor signal can thus be supplied to the downstream of thedisconnected location Y of the capacitor line 2 through the source linebypassing portions 16 c and 16 d and the capacitor line extensionportion 2 c. Therefore, disconnection can be repaired while suppressinggeneration of pixel defects.

Third Preferred Embodiment

FIG. 8 is a plan view of an active matrix substrate 20 c of thispreferred embodiment.

The structure of this active matrix substrate 20 c is substantially thesame as that of the active matrix substrate 20 a described in the firstpreferred embodiment. In this active matrix substrate 20 c, a sourceline 3 (a first source line 3 a) is shown to have disconnection insteadof a gate line 1.

Hereinafter, a method for repairing disconnection of a source line inthe active matrix substrate 20 c having the above-described structurewill be described with reference to FIG. 8. Disconnection of a firstsource line 3 a is repaired by the step of forming a capacitor linebypassing portion and the connecting step, as described below.

First, in the step of forming a capacitor line bypassing portion, laserbeams are emitted to locations D1 and D2 in FIG. 8. As a result, a firstcapacitor line 2 a extending across a pixel electrode 12 of a pixelcorresponding to a disconnected location Z of the first source line 3 adetected in the disconnection detecting step is cut at the positions (D1and D2) located outside the disconnected first source line 3 a and asecond source line 3 b adjacent to the first source line 3 a. Acapacitor line bypassing portion 17 b thus formed has a portionoverlapping the first source line 3 a and a portion overlapping thesecond source line 3 b.

In the connecting step, laser beams are emitted to locations C1 and C2in FIG. 8 in order to connect the portion (C2) of the capacitor linebypassing portion 17 b overlapping the first source line 3 a with thedisconnected first source line 3 a and to connect the portion (C1) ofthe capacitor line bypassing portion 17 b overlapping the second sourceline 3 b with the second source line 3 b.

By the above disconnection repairing step, a data signal can be suppliedto the downstream of the disconnected location Z of the first sourceline 3 a through the second source line 3 b and the capacitor linebypassing portion 17 b as shown by arrows in FIG. 8.

As has been described above, when a source line 3, that is, a firstsource line 3 a connected to a TFT 5, has disconnection, a capacitorline bypassing portion 17 b is formed and the first source line 3 a, thecapacitor line bypassing portion 17 b, and the second source line 3 bare connected to each other. A data signal can thus be supplied to thedownstream of the disconnected location Z of the first source line 3 athrough the second source line 3 b and the capacitor line bypassingportion 17 b.

Fourth Preferred Embodiment

FIG. 9 is a plan view of an active matrix substrate 20 d of thispreferred embodiment and FIG. 10 is a cross-sectional view of the activematrix substrate 20 d taken along line X-X in FIG. 9.

As can be seen from the comparison between FIGS. 2 and 10, this activematrix substrate 20 d does not have the capacitor electrodes 6, thesecond interlayer insulating film 9, and the contact holes 11 b formedin the active matrix substrate 20 a described in the first preferredembodiment. Therefore, an auxiliary capacitor is formed by a capacitorline 2, a pixel electrode 12, and a gate insulating film 7 and a firstinterlayer insulating film 8 interposed between the capacitor line 2 andthe pixel electrode 12.

In this active matrix substrate 20 d, it is not necessary to form thesecond interlayer insulating film 9 that is formed in the active matrixsubstrate 20 a of the first preferred embodiment by a die coating methodor the like. Therefore, the manufacturing process of the active matrixsubstrate can be simplified. Since the active matrix substrate 20 d doesnot have the second interlayer insulating film 9, an auxiliary capacitorcan be formed by using the gate insulating film 7 and the firstinterlayer insulating film 8 between the pixel electrode 12 and thecapacitor line 2 as a dielectric. Accordingly, it is easier to assure anauxiliary capacitor of a desired capacity. As a result, the apertureratio can be improved by, for example, reducing the width of thecapacitor line 2.

Fifth Preferred Embodiment

FIG. 11 shows an active matrix substrate 20 e of this preferredembodiment.

As shown in FIG. 11, in this active matrix substrate 20 e, each drainelectrode 3 d is connected to a corresponding capacitor electrode 6thorough an extended drain electrode 3 e. Since the structure andeffects of the active matrix substrate 20 e are otherwise the same asthe structure and effects of the active matrix substrate 20 a describedabove in the first preferred embodiment, description thereof will beomitted.

In this active matrix substrate 20 e, each drain electrode 3 d isextended and connected to a corresponding capacitor electrode 6.Therefore, even when a drain electrode 3 d and a corresponding pixelelectrode 12 are electrically disconnected from each other due to adefective contact hole 11 a formed in the interlayer insulating film 15on the drain electrode 3 d, a data signal can be supplied to the pixelelectrode 12 through the extended portion (the extended drain electrode3 e) of the drain electrode 3 d.

Moreover, even when the extended portion (the extended drain electrode 3e) of the drain electrode 3 d has disconnection, a data signal can besupplied to the capacitor electrode 6 through the contact hole 11 aformed in the interlayer insulating film 15 on the drain electrode 3 dand the pixel electrode 12.

Sixth Preferred Embodiment

FIG. 12 shows an active matrix substrate 20 f of this preferredembodiment.

As shown in FIG. 12, in this active matrix substrate 20 f, each TFT 5 isformed on a corresponding gate line 1 and each capacitor line 2 isformed by a first capacitor line 2 a, a second capacitor line 2 b, and acapacitor line branch portion 2 d. The first capacitor line 2 a extendslaterally in the middle of the figure. The second capacitor line 2 bextends in parallel with the first capacitor line 2 a above and belowthe first capacitor line 2 a in the figure. The capacitor line branchportion 2 d extends in an oblique direction in the figure and isconnected to the first capacitor line 2 a and the second capacitor line2 b. Each pixel electrode 12 has a slit portion 12 c that overlaps thesecond capacitor line 2 b and the capacitor branch portion 2 d.

More specifically, in each TFT 5, the gate line 1 serves also as a gateelectrode, and two drain electrodes 3 d are formed with a sourceelectrode 3 c interposed therebetween. The two drain electrodes 3 d areextended to the region where the first capacitor line 2 a is formed, andare connected to a corresponding capacitor electrode 6.

In this active matrix substrate 20 f, each pixel electrode 12 has a slitportion 12 c for dividing orientation of liquid crystal molecules andthe slit portion 12 c overlaps each capacitor line 2 (the secondcapacitor line 2 b and the capacitor line branch portion 2 d). Theregion where the slit portion 12 c is formed usually does not functionas a transparent region. Therefore, by forming each capacitor line 2 sothat the capacitor line 2 overlaps this region, reduction in theaperture ratio resulting from formation of an auxiliary capacitor can besuppressed. Note that such an active matrix substrate is preferably usedin an MVA mode liquid crystal display device.

An active matrix substrate having a slit portion 12 c for separatingorientation of liquid crystal molecules in each pixel electrode 12 isshown in this preferred embodiment. Alternatively, however, a projection(12 c) of a photosensitive acrylic resin may be formed at a positioncorresponding to the slit portion 12 c of the pixel electrode 12 inorder to control orientation of liquid crystal molecules.

Seventh Preferred Embodiment

FIG. 13 shows an active matrix substrate 20 g of this preferredembodiment.

This active matrix substrate 20 g is a modification of the sixthpreferred embodiment and is capable of multi-pixel driving.

As shown in FIG. 13, this active matrix substrate 20 g has a first TFT 5a and a second TFT 5 b at each intersection of gate lines 1 and sourcelines 3, and each pixel electrode 12 is formed by a first pixelelectrode 12 a and a second pixel electrode 12 b. The first pixelelectrode 12 a is connected to a drain electrode 3 d (a capacitorelectrode 6) of the first TFT 5 located on the upper side of the figure.The second pixel electrode 12 b is connected to a drain electrode 3 d (acapacitor electrode 6) of the second TFT 5 b located on the lower sideof the figure.

The active matrix substrate 20 g is capable of multi-pixel driving. Morespecifically, the active matrix substrate 20 g has pixel groups eachformed by pixels which are to be selected by a gate signal supplied tothe same gate line 1 and a source signal supplied to the same sourceline 3 and which receive the same source signal. In other words, eachpixel group is formed by the pixels located adjacent to each other inthe vertical direction in the figure (the first pixel electrode 12 a andthe second pixel electrode 12 b), and the pixels of each pixel group areindependently driven by respective TFTs (the first TFT 5 a and thesecond TFT 5 b). In this active matrix substrate 20 g capable ofmulti-pixel driving, at least two pixels forming each pixel group aredifferent in luminance when an image is displayed. For example, eachpixel group can have a bright pixel and a dark pixel when signalvoltages of opposite phases are applied to the capacitor lines 2extending across the pixel group. More specifically, area gradationtechnology uses two kinds of Cs waveform voltages, that is, a Cswaveform voltage (Cs polarity +) contributing to pushing up a drainsignal voltage (Vs) supplied from the source line 3 at timing forcapacitive coupling when a scanning signal is off, and a Cs waveformvoltage (Cs polarity −) contributing to pushing down the Vs. By usingthe area gradation technology, an effective voltage to be applied toeach pixel group is varied on a pixel by pixel basis by capacitivecoupling of the Cs waveform voltage, Cs capacitor, and liquid crystalcapacitor, whereby bright and dark pixels can be formed. Examples ofsuch a pixel division structure for providing display by using pixeldivision of each pixel group include a 1:1 pixel division structure inwhich the area of the bright pixel and the area of the dark pixel areequal to each other and a 1:3 pixel division structure in which the areaof the bright pixel is one third of the area of the dark pixel. Amongthem, the 1:3 pixel division structure is particularly effective as ameasure for whitening at oblique viewing angles on the display screen ofthe liquid crystal display device (a measure to implement a widerviewing angle).

In this active matrix substrate 20 g, each pixel is independently drivenin each pixel group. Therefore, both a bright pixel and a dark pixel canbe present in each pixel group, and intermediate gray scales can beexpressed by area gradation. As a result, whitening at oblique viewingangles on the display screen of the liquid crystal display device can beimproved.

Accordingly, disconnection can be repaired also in the active matrixsubstrate capable of multi-pixel driving without degrading the effect ofimproving whitening.

In each of the above-described preferred embodiments, each of the areaof the region where a first source line overlaps a capacitor line andthe area of the region where a second source line overlaps a capacitorline is 25 μm² or more. In this case, a sufficient laser radiationregion is ensured in the process of melting an insulating film betweenthe first source line 3 a and the second source line 3 and the capacitorline 3 by using a YAG laser or the like. As a result, improvedreliability of electric conduction between the first source line and thesecond source line and the capacitor line can be implemented.

As has been described above, the present invention is capable ofrepairing disconnection in an active matrix substrate of a liquidcrystal display device while suppressing generation of pixel defects.Therefore, the invention is useful for a display device having an activematrix substrate.

While preferred embodiments of the present invention have been describedabove, it is to be understood that variations and modifications will beapparent to those skilled in the art without departing the scope andspirit of the present invention. The scope of the present invention,therefore, is to be determined solely by the following claims.

1. An active matrix substrate, comprising: a plurality of pixelelectrodes arranged in a matrix pattern and defining pixels; a pluralityof gate lines each provided between corresponding ones of the pluralityof pixel electrodes and extending substantially in parallel with eachother; a plurality of first source lines each provided betweencorresponding ones of the plurality of pixel electrodes and extending ina direction crossing an extending direction of the plurality of gatelines; a plurality of switching elements provided corresponding torespective ones of the plurality of pixel electrodes and connected torespective ones of the plurality of pixel electrodes, respective ones ofthe plurality of gate lines, and respective ones of the plurality offirst source lines; a plurality of capacitor lines each provided betweencorresponding ones of the plurality of gate lines and extendingsubstantially in parallel with each other; and a plurality of secondsource lines each provided between the same corresponding ones of theplurality of pixel electrodes as respective ones of the plurality offirst source lines and extending directly adjacent to and substantiallyin parallel with the respective ones of the plurality of first sourcelines over an entire side of the pixels.
 2. The active matrix substrateaccording to claim 1, wherein the first source line and the secondsource line are connected to each other.
 3. The active matrix substrateaccording to claim 1, wherein each of the capacitor lines is defined bya first capacitor line and a second capacitor line that extendsubstantially in parallel with each other.
 4. The active matrixsubstrate according to claim 3, wherein the first capacitor line and thesecond capacitor line are connected to each other.
 5. The active matrixsubstrate according to claim 1, wherein each of the capacitor lines isextended at every pixel so as to have a capacitor line extension portionextending along the capacitor line and having a portion overlapping acorresponding first source line and a portion overlapping acorresponding second source line.
 6. The active matrix substrateaccording to claim 1, wherein capacitor electrodes are arranged so as tooverlap the respective capacitor lines with a dielectric film interposedtherebetween.
 7. The active matrix substrate according to claim 6,wherein an interlayer insulating film is provided between the switchingelements and the capacitor electrodes and the pixel electrodes, each ofthe plurality of switching elements has a drain electrode connected tothe corresponding pixel electrode, and the drain electrodes and thecapacitor electrodes are connected to the respective pixel electrodesthrough respective contact holes formed in the interlayer insulatingfilm.
 8. The active matrix substrate according to claim 7, wherein thedrain electrode is extended and connected to a corresponding capacitorelectrode.
 9. The active matrix substrate according to claim 1, whereineach of the plurality of pixel electrodes has a slit portion arranged todivide orientation of liquid crystal molecules or a projection arrangedto control orientation of liquid crystal molecules, and the slit portionand the projection overlap a corresponding capacitor line.
 10. Theactive matrix substrate according to claim 4, wherein adjacent pixels ofthe plurality of pixels define a pixel group, and at least two pixels ofthe pixel group are different in luminance when an image is displayed.11. The active matrix substrate according to claim 1, wherein each of anarea of a region where each of the first source lines overlaps acorresponding capacitor line and an area of a region where each of thesecond source lines overlaps a corresponding capacitor line is about 25μm² or more.
 12. A display device comprising the active matrix substrateof claim
 1. 13. A television apparatus comprising the display device ofclaim 12 and a tuner portion for receiving television broadcasting. 14.A manufacturing method of an active matrix substrate including aplurality of pixel electrodes arranged in a matrix pattern and eachforming a pixel, a plurality of gate lines each provided between thecorresponding pixel electrodes and extending substantially in parallelwith each other, a plurality of first source lines each provided betweenthe corresponding pixel electrodes and extending in a direction crossingan extending direction of the gate lines, a plurality of switchingelements provided corresponding to the respective pixel electrodes andconnected to the respective pixel electrodes, the respective gate lines,and the respective first source lines, a plurality of capacitor lineseach provided between the corresponding gate lines and extendingsubstantially in parallel with each other, and a plurality of secondsource lines each provided between the corresponding pixel electrodesand extending substantially in parallel with the first source lines,comprising: the step of detecting disconnection of a gate line; the stepof forming a source line bypassing portion by cutting each second sourceline provided along both sides of a pixel electrode of a pixelcorresponding to a disconnected location of the gate line detected inthe disconnection detecting step at a position located beyond acapacitor line extending across the pixel electrode and a positionlocated beyond the disconnected gate line, so that each source linebypassing portion has a portion overlapping the capacitor line and aportion overlapping the gate line; the step of forming a capacitor linebypassing portion by cutting the capacitor line extending across thepixel electrode of the pixel corresponding to the disconnected locationof the gate line detected in the disconnection detecting step at aposition located beyond each second source line provided along bothsides of the pixel electrode of the pixel corresponding to thedisconnected location, so that the capacitor line bypassing portion hasa portion overlapping one of the second source lines and a portionoverlapping another second source line; and the step of connecting therespective portions of the source line bypassing portions overlappingthe gate line with the disconnected gate line and connecting therespective portions of the source line bypassing portions overlappingthe capacitor line with the capacitor line bypassing portion.
 15. Amanufacturing method of an active matrix substrate including a pluralityof pixel electrodes arranged in a matrix pattern and each forming apixel, a plurality of gate lines each provided between the correspondingpixel electrodes and extending substantially in parallel with eachother, a plurality of first source lines each provided between thecorresponding pixel electrodes and extending in a direction crossing anextending direction of the gate lines, a plurality of switching elementsprovided corresponding to the respective pixel electrodes and connectedto the respective pixel electrodes, the respective gate lines, and therespective first source lines, a plurality of capacitor lines eachprovided between the corresponding gate lines and extending in parallelwith each other, and a plurality of second source lines each providedbetween the corresponding pixel electrodes and extending substantiallyin parallel with the first source lines, comprising: the step ofdetecting disconnection of a first source line; the step of forming acapacitor line bypassing portion by cutting a capacitor line extendingacross a pixel electrode of a pixel corresponding to a disconnectedlocation of the first source line detected in the disconnectiondetecting step at positions located outside the disconnected firstsource line and a second source line adjacent to the first source line,so that the capacitor line bypassing portion has a portion overlappingthe first source line and a portion overlapping the second source line;and the step of connecting the portion of the capacitor line bypassingportion overlapping the first source line with the disconnected firstsource line and connecting the portion of the capacitor line bypassingportion overlapping the second source line with the second source line.16. A manufacturing method of an active matrix substrate including aplurality of pixel electrodes arranged in a matrix pattern and eachforming a pixel, a plurality of gate lines each provided between thecorresponding pixel electrodes and extending substantially in parallelwith each other, a plurality of first source lines each provided betweenthe corresponding pixel electrodes and extending in a direction crossingan extending direction of the gate lines, a plurality of switchingelements provided corresponding to the respective pixel electrodes andconnected to the respective pixel electrodes, the respective gate lines,and the respective first source lines, a plurality of capacitor lineseach provided between the corresponding gate lines and extending inparallel with each other, a plurality of second source lines eachprovided between the corresponding pixel electrodes and extendingsubstantially in parallel with the first source lines, and a capacitorline extension portion extended from each capacitor line at every pixelso as to extend along the capacitor line and having a portionoverlapping a corresponding first source line and a portion overlappinga corresponding second source line, comprising: the step of detectingdisconnection of a capacitor line; the step of forming a source linebypassing portion by cutting a first source line and a second sourceline provided along both sides of a pixel electrode of a pixelcorresponding to a disconnected location of the capacitor line detectedin the disconnection detecting step at a position located beyond thedisconnected capacitor line and a position located beyond a capacitorline extension portion extended from the capacitor line, so that eachsource line bypassing portion has a portion overlapping the capacitorline and a portion overlapping the capacitor line extension portion; andthe step of connecting the respective portions of the source linebypassing portions overlapping the capacitor line with the disconnectedcapacitor line and connecting the respective portions of the source linebypassing portions overlapping the capacitor line extension portion withthe capacitor line extension portion.
 17. The manufacturing methodaccording to claim 14, wherein the cutting and the connection areconducted by laser radiation.
 18. The manufacturing method according toclaim 17, wherein the cutting is conducted by a fourth harmonic wave ofa YAG laser.
 19. The manufacturing method according to claim 17, whereinthe connection is conducted by a second harmonic wave of a YAG laser.20. A manufacturing method of a display device having an active matrixsubstrate including a plurality of pixel electrodes arranged in a matrixpattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extendingsubstantially in parallel with each other, a plurality of first sourcelines each provided between the corresponding pixel electrodes andextending in a direction crossing an extending direction of the gatelines, a plurality of switching elements provided corresponding to therespective pixel electrodes and connected to the respective pixelelectrodes, the respective gate lines, and the respective first sourcelines, a plurality of capacitor lines each provided between thecorresponding gate lines and extending substantially in parallel witheach other, and a plurality of second source lines each provided betweenthe corresponding pixel electrodes and extending substantially inparallel with the first source lines, comprising: the step of detectingdisconnection of a gate line; the step of forming a source linebypassing portion by cutting each second source line provided along bothsides of a pixel electrode of a pixel corresponding to a disconnectedlocation of the gate line detected in the disconnection detecting stepat a position located beyond a capacitor line extending across the pixelelectrode and a position located beyond the disconnected gate line, sothat each source line bypassing portion has a portion overlapping thecapacitor line and a portion overlapping the gate line; the step offorming a capacitor line bypassing portion by cutting the capacitor lineextending across the pixel electrode of the pixel corresponding to thedisconnected location of the gate line detected in the disconnectiondetecting step at a position located beyond each second source lineprovided along both sides of the pixel electrode of the pixelcorresponding to the disconnected location, so that the capacitor linebypassing portion has a portion overlapping one of the second sourcelines and a portion overlapping another second source line; and the stepof connecting the respective portions of the source line bypassingportions overlapping the gate line with the disconnected gate line andconnecting the respective portions of the source line bypassing portionsoverlapping the capacitor line with the capacitor line bypassingportion.
 21. A manufacturing method of a display device having an activematrix substrate including a plurality of pixel electrodes arranged in amatrix pattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extendingsubstantially in parallel with each other, a plurality of first sourcelines each provided between the corresponding pixel electrodes andextending in a direction crossing an extending direction of the gatelines, a plurality of switching elements provided corresponding to therespective pixel electrodes and connected to the respective pixelelectrodes, the respective gate lines, and the respective first sourcelines, a plurality of capacitor lines each provided between thecorresponding gate lines and extending substantially in parallel witheach other, and a plurality of second source lines each provided betweenthe corresponding pixel electrodes and extending substantially inparallel with the first source lines, comprising: the step of detectingdisconnection of a first source line; the step of forming a capacitorline bypassing portion by cutting a capacitor line extending across apixel electrode of a pixel corresponding to a disconnected location ofthe first source line detected in the disconnection detecting step atpositions located outside the disconnected first source line and asecond source line adjacent to the first source line, so that thecapacitor line bypassing portion has a portion overlapping the firstsource line and a portion overlapping the second source line; and thestep of connecting the portion of the capacitor line bypassing portionoverlapping the first source line with the disconnected first sourceline and connecting the portion of the capacitor line bypassing portionoverlapping the second source line with the second source line.
 22. Amanufacturing method of a display device having an active matrixsubstrate including a plurality of pixel electrodes arranged in a matrixpattern and each forming a pixel, a plurality of gate lines eachprovided between the corresponding pixel electrodes and extendingsubstantially in parallel with each other, a plurality of first sourcelines each provided between the corresponding pixel electrodes andextending in a direction crossing an extending direction of the gatelines, a plurality of switching elements provided corresponding to therespective pixel electrodes and connected to the respective pixelelectrodes, the respective gate lines, and the respective first sourcelines, a plurality of capacitor lines each provided between thecorresponding gate lines and extending substantially in parallel witheach other, a plurality of second source lines each provided between thecorresponding pixel electrodes and extending substantially in parallelwith the first source lines, and a capacitor line extension portionextended from each capacitor line at every pixel so as to extend alongthe capacitor line and having a portion overlapping a correspondingfirst source line and a portion overlapping a corresponding secondsource line, comprising: the step of detecting disconnection of acapacitor line; the step of forming a source line bypassing portion bycutting a first source line and a second source line provided along bothsides of a pixel electrode of a pixel corresponding to a disconnectedlocation of the capacitor line detected in the disconnection detectingstep at a position located beyond the disconnected capacitor line and aposition located beyond a capacitor line extension portion extended fromthe capacitor line, so that each source line bypassing portion has aportion overlapping the capacitor line and a portion overlapping thecapacitor line extension portion; and the step of connecting therespective portions of the source line bypassing portions overlappingthe capacitor line with the disconnected capacitor line and connectingthe respective portions of the source line bypassing portionsoverlapping the capacitor line extension portion with the capacitor lineextension portion.
 23. The manufacturing method according to claim 20,wherein the cutting and the connection are conducted by laser radiation.24. The manufacturing method according to claim 23, wherein the cuttingis conducted by a fourth harmonic wave of a YAG laser.
 25. Themanufacturing method according to claim 23, wherein the connection isconducted by a second harmonic wave of a YAG laser.